کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5426059 | 1395874 | 2007 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Morphology changes due to AC induced electromigration in Gd islands on W(1 1 0)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Gd islands were grown on W(1 1 0) surface by evaporating Gd on the substrate at room temperature and subsequent annealing. STM images reveal in many cases islands which have a deep hole inside them. The appearance of the hole is associated with the application of an AC field. No such holes appear when the sample is heated by a DC current. We show that this can be explained by the combined affect of the AC field and the barrier to diffusion introduced by steps that can create a nucleus for further growth of an island which includes a hole in the middle. This may be generalized to a technique of tailoring the size, shape and distances of islands by, for example, two orthogonal AC fields with a phase delay of 90° between them.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 601, Issue 5, 1 March 2007, Pages 1177-1183
Journal: Surface Science - Volume 601, Issue 5, 1 March 2007, Pages 1177-1183
نویسندگان
H. Realpe, N. Shamir, M.H. Mintz, Y. Manassen,