کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5426230 | 1395883 | 2007 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
CF interaction with Si(1 0 0)-(2 Ã 1): Molecular dynamics simulation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, the interaction of CF with the clean Si(1Â 0Â 0)-(2Â ÃÂ 1) surface at normal incidence and room temperature was investigated using molecular dynamics simulation. Incident energies of 2, 12 and 50Â eV were simulated. C atoms, arising from dissociation, preferentially react with Si to form Si-C bonds. A SixCyFz interfacial layer is formed, but no etching is observed. The interfacial layer thickness increases with increasing incident energy, mainly through enhanced penetration of the silicon lattice. Silicon carbide and fluorosilyl species are formed at 50Â eV, which is in good agreement with available experimental data. The level of agreement between the simulated and experimental results is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 601, Issue 1, 1 January 2007, Pages 76-86
Journal: Surface Science - Volume 601, Issue 1, 1 January 2007, Pages 76-86
نویسندگان
F. Gou, M.A. Gleeson, A.W. Kleyn,