کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5435314 1509345 2017 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigation of the source-drain electrodes/the active layer contact-effect on the performance of organic phototransistor
ترجمه فارسی عنوان
بررسی الکترود منبع تخلیه / اثر تماس لایه فعال بر عملکرد فوتوتن ترانزیستور آلی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد بیومتریال
چکیده انگلیسی


- Pentacene-OPT with Au electrodes obtains higher photoresponsivity than that with Al.
- CuPc-OPT with Al Shottky contact achieves a higher PMAX than that with Au electrodes.
- The improved PMAX effects in Al-CuPc-OPT can be ascribed to PIBL effect.
- The physical mechanism of photon induced barrier lowering in OPT was studied.
- Schottky barrier of source-drain/active layer plays a beneficial role in some OPTs.

In order to clarify the influence of the source/drain (S/D) electrodes/the active layer contact condition on the photoelectric properties of the organic phototransistor (OPT), pentacene (Pn) and copper phthalocyanine (CuPc) based OPTs with Au or Al as S/D electrodes were fabricated. The output and transfer characteristics of OPTs were investigated in the dark and under illumination. The results indicate that high-mobility Pn-OPTs are more suitable for the use of Au electrode with low contact barrier to obtain higher photoresponsivity. And low-mobility CuPc-OPTs are more suitable for the use of Al electrode with Shottky contact for maintaining the same level of photoresponsivity while achieving a high maximum photosensitivity (PMAX). Compared with Au-CuPc-OPT, the improved PMAX effects of Shottky contact on Al-CuPc-OPT can be ascribed to the photon induced barrier lowering (PIBL) effect after illumination. The physical mechanism of PIBL in OPT was deduced in this paper.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 233, November 2017, Pages 58-62
نویسندگان
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