Room temperature synthesis of transition metal silicide-conducting polymer micro-composites for thermoelectric applications

- Room temperature synthesis of the TE composite of TM silicide-PEDOT:PSS.
- Synthesis NFC-PEDOT:PSS aerogel microparticles.
- Use of conducting aerogel microparticles as binder in the pellet formation, and for facilitating the electrical contact between the silicide microparticles.
- Avoids the high temperature sintering methods necessary for the bulk silicides and the large number of printing steps needed in the thin film polymer thermoelectrics.

Organic polymer thermoelectrics (TE) as well as transition metal (TM) silicides are two thermoelectric class of materials of interest because they are composed of atomic elements of high abundance; which is a prerequisite for mass implementation of thermoelectric (TE) solutions for solar and waste heat recovery. But both materials have drawbacks when it comes to finding low-cost manufacturing. The metal silicide needs high temperature (>1000 °C) for creating TE legs in a device from solid powder, but it is easy to achieve long TE legs in this case. On the contrary, organic TEs are synthesized at low temperature from solution. However, it is difficult to form long legs or thick films because of their low solubility. In this work, we propose a novel method for the room temperature synthesis of TE composite containing the microparticles of chromium disilicide; CrSi2 (inorganic filler) in an organic matrix of nanofibrillated cellulose- poly(3,4-ethyelenedioxythiophene)-polystyrene sulfonate (NFC-PEDOT:PSS). With this method, it is easy to create long TE legs in a room temperature process. The originality of the approach is the use of conducting polymer aerogel microparticles mixed with CrSi2 microparticles to obtain a composite solid at room temperature under pressure. We foresee that the method can be scaled up to fabricate and pattern TE modules. The composite has an electrical conductivity (σ) of 5.4 ± 0.5 S/cm and the Seebeck coefficient (α) of 88 ± 9 μV/K, power factor (α2σ) of 4 ± 1 μWm−1K−2 at room temperature. At a temperature difference of 32 °C, the output power/unit area drawn across the load, with the resistance same as the internal resistance of the device is 0.6 ± 0.1 μW/cm2.

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