کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5440646 | 1398235 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of CH4/SiCl4 ratio on the composition and microstructure of ã110ã-oriented β-SiC bulks by halide CVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Halide chemical vapor deposition process was carried out for fast fabricating oriented stoichiometric β-SiC through controlling flow rate of precursors (SiCl4 and CH4). The effects of molar ratio of C and Si precursors (RC/Si) on composition, preferred orientation, microstructure and deposition rate (Rdep) were investigated. The deposits transformed from silicon-rich to stoichiometric β-SiC to carbon-rich with increasing RC/Si. ã110ã-oriented stoichiometric β-SiC with lower density of defects were obtained at RC/Si in the range of 0.86-1.00, where the maximum Rdep was 883 μm/h at RC/Si = 1.00, leading to a thickness of 1.7 mm in 2 h deposition. Formation of ridge-like morphology has been discussed based on a twin plane propagation model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of the European Ceramic Society - Volume 37, Issue 4, April 2017, Pages 1217-1223
Journal: Journal of the European Ceramic Society - Volume 37, Issue 4, April 2017, Pages 1217-1223
نویسندگان
Rong Tu, Dingheng Zheng, Hong Cheng, Mingwei Hu, Song Zhang, Mingxu Han, Takashi Goto, Lianmeng Zhang,