کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5440681 | 1398235 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High pressure synthesis, structure and thermoelectric properties of BiCuChO (Ch = S, Se, Te)
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
Bismuth copper oxychalcogenides, BiCuChO (Ch = S, Se, Te), are facile, and rapidly synthesized by high pressure method. The Rietveld refinement of powder X-ray diffractions shows that BiCuChO compounds have a layered crystal structure with a space group of P4/nmm. All the high pressure synthesised samples show semiconductor characteristics, while BiCuTeO prepared by the conventional method displays metal conducting behavior. The conducting behavior of BiCuTeO obtained in this study originates from the low crystal defect concentrations under the effects of high pressure; evidenced by density functional theory calculations. Large Seebeck coefficient â¼600 μV/K was obtained for BiCuSO, due to its high carrier effect mass. BiCuChO exhibits extremely low thermal conductivity (<1 Wmâ1Kâ1), which decreases with an increase in the Ch2â ion radius. The maximum figure of merit reaches 0.03, 0.31 and 0.65 for BiCuSO, BiCuSeO and BiCuTeO, respectively, values which are comparable to those for samples prepared by the conventional, complex method.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of the European Ceramic Society - Volume 37, Issue 4, April 2017, Pages 1541-1546
Journal: Journal of the European Ceramic Society - Volume 37, Issue 4, April 2017, Pages 1541-1546
نویسندگان
Hongyu Zhu, Taichao Su, Hongtao Li, Chunying Pu, Dawei Zhou, Pinwen Zhu, Xin Wang,