کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5440933 | 1398241 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of highly oriented β-SiC bulks by halide laser chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Highly oriented β-SiC bulks with high hardness were fabricated by halide laser chemical vapor deposition (HLCVD) using SiCl4, CH4 and H2 as precursors. The effects of total pressure (Ptot) and deposition temperature (Tdep) on the preferred orientation, microstructure, deposition rate (Rdep) and micro-hardness were investigated. The ã110ã-oriented β-SiC bulks were obtained at low Ptot (2-4 kPa), non-oriented β-SiC bulks were obtained at mediate Ptot (6 kPa), and ã111ã-oriented β-SiC bulks were obtained at high Ptot (10-40 kPa), exhibiting faceted, cauliflower-like and six-fold pyramid-like microstructure, respectively. The maximum Rdep of ã111ã- and ã110ã-oriented β-SiC bulks were 3600 and 1300 μm/h at, respectively. The activation energy obtained by the plot of lgRdep-Tdepâ1 is 170 to 280 kJ molâ1, showing an exponential relation with PSi. The Vickers micro-hardness of β-SiC bulks increased with increasing Ptot and showed the highest value of 35 GPa at Ptot = 40 kPa with a complete ã111ã orientation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of the European Ceramic Society - Volume 37, Issue 2, February 2017, Pages 509-515
Journal: Journal of the European Ceramic Society - Volume 37, Issue 2, February 2017, Pages 509-515
نویسندگان
Hong Cheng, Rong Tu, Song Zhang, Mingxu Han, Takashi Goto, Lianmeng Zhang,