کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5441137 1510375 2017 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analysis of electrical conduction phenomena in highly photosensitive amorphous InxSb20 − xAg10Se70 (0 ≤ x ≤ 20) chalcogenide films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Analysis of electrical conduction phenomena in highly photosensitive amorphous InxSb20 − xAg10Se70 (0 ≤ x ≤ 20) chalcogenide films
چکیده انگلیسی
In this work the study of optical gap, dc conduction and photoconductivity for thermally evaporated amorphous InxSb20 − xAg10Se70 (0 ≤ x ≤ 20) chalcogenide films have been reported. The conductivity is thermally activated and dc activation energy increases from 0.25 to 0.34 eV with indium content for this quaternary system. Similar trends in the optical gap have also been observed. The value of pre-exponential factor revealed the conduction processes as hoping of charge carriers in localized states. The photosensitivity increases linearly with light intensity while its value is found to increase from 20.53 to 132.9 with x in the present system. Photocurrent versus light intensity follows the power law and reveals the dominant recombination process. The modelling of photocurrent decay to a stretched exponential function for different compositions and intensities of light has been studied. The value of both decay time constant and dispersion parameters are found to increase with indium concentration and light intensity. The observed results about the conduction processes are important for the development of low cost photodetectors and solar absorbers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 472, 15 September 2017, Pages 70-74
نویسندگان
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