کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5441305 | 1510383 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The influence of local SiC bonding density on the photoluminescence of Si-QDs upon thermal annealing the hydrogenated amorphous Si-rich silicon carbide thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Non-stoichiometric hydrogenated amorphous silicon carbide thin films (α-SiC:H) were deposited by plasma-enhanced chemical vapor deposition. The samples were subsequently post-annealed at 750, 900, 1050, and 1200 °C, respectively. Photoluminescence (PL) was measured by fluorescence spectrometer at room temperature. Infrared absorption was carried out by Fourier transform infrared absorption. Chemical compositions were analyzed by X-ray photoelectron spectroscopy. The synthesis of silicon quantum dots (Si-QDs) was characterized by Raman scattering spectroscopy and directly by high-resolution transmission electron microscope. PL measurements revealed that there were complicatedly shifted sub-bands upon the thermal annealing temperature increase. The behaviors of these shifted sub-bands showed converse trends as that of the local SiC bonding densities. A possible influence for the PL by the evolvement of the local SiC bonding densities and the synthesis of Si-QDs in the α-SiC:H samples is supposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 463, 1 May 2017, Pages 50-55
Journal: Journal of Non-Crystalline Solids - Volume 463, 1 May 2017, Pages 50-55
نویسندگان
Guozhi Wen, Jijun Fan, Xianghu Li, Yuanyuan Liu,