Thermally evaporated InZnO transparent thin films: Optical, electrical and photoconductivity behavior

Indium Zinc Oxide (InZnO) thin films were deposited on pre-cleaned glass substrate by thermal evaporation technique. X-ray diffraction pattern revealed mixed phase with polycrystalline structure. The uniform distribution of spherical shape grains over entire film surface was observed through scanning electron microscopy. Optical study revealed the higher transmittance (80%) and wide band gap energy (3.46 and 3.49 eV). Low resistivity, high conductivity and low activation energy were obtained from Four Point Probe method. Dark and illuminated light on 100 nm film showed better photo sensitivity than 200 nm film. The observed uniform surface morphology, higher transmittance, wide band gap energy, low resistivity, high conductivity and good photoconductivity properties indicated that these thermally evaporated InZnO thin films could be used as TCOs instead of ITO in electronic and opto-electronic devices in future.