کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5442679 | 1510770 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of the intense laser field on the electronic states and optical properties of n-type double δ-doped GaAs quantum wells
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The effect of the intense laser field on the electronic states and optical properties of n-type double δ-doped GaAs quantum wells The effect of the intense laser field on the electronic states and optical properties of n-type double δ-doped GaAs quantum wells](/preview/png/5442679.png)
چکیده انگلیسی
In this work, within the effective mass approximation we have performed a theoretical study of electronic states, the intersubband-related optical absorption coefficient and relative refractive index change properties in the GaAs-based double δ-doped quantum well under non-resonant intense laser field. By solving the Schrödinger equation in the laser-dressed confinement potential, we calculated eigenvalues and corresponding eigenfunctions as an intense laser parameter. We concluded that the separation between ground and first excited energy levels in the double δ-doped quantum well increases in energy by the increase of the laser field intensity and this effect leads to an optical blue-shift in intersubband transitions. Therefore a significant tunability of the optical transitions in double δ-doped quantum well can be achieved by modulating the intensity of the intense laser field.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 64, February 2017, Pages 82-87
Journal: Optical Materials - Volume 64, February 2017, Pages 82-87
نویسندگان
E. Kasapoglu, U. Yesilgul, F. Ungan, I. Sökmen, H. Sari,