A new type of graphene oxide and its application in laser devices

Laser materials are very important in development of efficient laser devices. In this paper, a new type of graphene oxide (GO) was synthesized for developing pulse laser devices. The GO was characterized by X-ray diffraction, scanning electron microscopy, Fourier transform infrared, elemental analysis. Experimental data show that percentage of oxygen (46.85 wt%) of the GO is higher than that (27.97 wt%) of GO which was prepared by a Hummers' method. Main oxygen-containing groups at the GO are hydroxyl groups. The GO could be potential optoelectronic materials, because the increase of oxygen percentage would improve electrochemical pseudocapacitor. Optoelectronic properties of the GO were demonstrated by a Q-switching laser which has an optical-optical conversion efficiency of 11.3%. The GO shows very high stability under 6 W pump power over 1 h. Experimental results suggested that this kind of GO would be potential pulse laser materials.