کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5443032 | 1510772 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-temperature luminescence and thermoluminescence from BeO:Zn single crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Low-temperature luminescence and thermoluminescence from BeO:Zn single crystals Low-temperature luminescence and thermoluminescence from BeO:Zn single crystals](/preview/png/5443032.png)
چکیده انگلیسی
Low-temperature luminescence and thermoluminescence (TL) of BeO:Zn single crystals have been studied in the temperature range of 6-380Â K and energy ranges of 1.2-6.5Â eV (emission spectra) and 3.7-20Â eV (luminescence excitation and reflection spectra). The introduction of zinc impurity ions (0.05Â at. %) into BeO host lattice leads to the creation of both the trapped electron and hole centers: Zn+ and Zn2+ Oâ. These two new centers are responsible for two TL glow peaks at 307 and 145Â K with activation energies of 0.96 and 0.40Â eV, and two emission bands at 6.0 and 1.9-2.6Â eV. The first emission band is attributed to radiative annihilation of the Zn-impurity bound excitons, and the second one is associated with the intracenter electronic transitions in the defect complex comprising zinc impurity ion. The 6.0Â eV luminescence center can be excited at 9.6Â eV, the low-energy tail of the BeO host absorption, but below the first excitonic maximum (10.45Â eV). The 1.9-2.6Â eV luminescence center can be excited at the BeO optical transparency band. Both emission bands in BeO:Zn appear in the X-ray induced luminescence spectra at TÂ =Â 6Â K. This indicates that not only these luminescence centers are excited during band-to-band transitions, but they participate in recombination processes as well. The low-temperature (T0Â =Â 6Â K)Â TL study of BeO:Zn single crystals was made for the first time. Analysis of the low-temperature TL glow curves allowed us not only to experimentally determine the energy characteristics of the Zn impurity states in BeO:Zn, but reveal an extremely strong influence of the isovalent zinc impurity on fluctuation rearrangement of BeO host lattice. Note, the fluctuation rearrangement of BeO host lattice, which occurs in the temperature range of self-trapped exciton transformation (80-180Â K), was previously known only for undoped BeO and BeO crystals with heterovalent impurities [I. N. Ogorodnikov and A. V. Kruzhalov, Proc. SPIE 2967 (1997) 42].
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 62, December 2016, Pages 219-226
Journal: Optical Materials - Volume 62, December 2016, Pages 219-226
نویسندگان
I.N. Ogorodnikov, M.D. Petrenko, V. Yu. Ivanov,