The ultrafast phase-change memory with high-thermal stability based on SiC-doped antimony

SiC doping Sb is a feasible solution to overcome the contradictory nature of traditional phase-change materials. That both fast speed and high stability can be achieved at the same time is of great importance. And the experimental data have put in evidence that adding SiC impurities to pure Sb raises the crystallization temperature (Tc ~ 236 °C) and the corresponding activation energy (Ea ~ 2.8 eV) for (SiC)4.5Sb91. Thus it further leads to the favorable data retention (T10-yr ~ 119 °C), especially maintains the ultrafast switching speed (7 ns) and holds a set of low operation voltages (1.0 V) in (SiC)4.5Sb91-based devices.255