Device Characterization of ZnInSe2 Thin Films

p-Si/n-ZnInSe2 hetero-junction diode was deposited by thermal evaporation of elemental evaporation sources on the 600 μm thick p-type (1 1 1) mono-crystalline Si wafers having the resistivity value of 1 - 3 (Ω.cm). Detailed electrical characterization of the hetero-junction was performed by the help of temperature dependent current-voltage measurements. The forward current-voltage behaviour of the hetero-junction diode was investigated under the evaluation of possible current transport mechanisms. In the studied temperature range, thermionic emission and space charge limited current were found to be predominant transport models for this hetero-junction. In addition, the parasitic resistance, ideality factor and barrier height were determined. The contribution of the p- and n-layer in the junction was studied under the spectral photo-response measurement.