Atomic Layer Deposited ZnO: B As Transparent Conductive Oxide for Increased Short Circuit Current Density in Silicon Heterojunction Solar Cells

Outstanding Jsc values of 35.50 mA/cm2 for cells on double sided polished wafer (DSP) and 38.76 mA/cm2 for cells on textured wafer are observed for SHJ cells with ZnO:B, as compared to 33.48 mA/cm2 (DSP) and 37.31 mA/cm2 (textured) for reference cells with ITO. The potential of ZnO:B grown with TIB as indium-free TCO with increased transmission for SHJ solar cells is thereby demonstrated. Furthermore, indium free SHJ solar cells with ALD deposited ZnO:B as front TCO and ZnO:Al as back TCO have been successfully demonstrated.