Effect of NBTI/PBTI aging and process variations on write failures in MOSFET and FinFET flip-flops

• Characterization of Write Noise Margins of various flip-flop cells is quantified.
• Joint effect of PVT with N/PBTI aging on MOSFET and FinFET based FFs is analyzed.
• Speed, area, static and dynamic power consumption of each FF cell is calculated.
• Massive SPICE MC simulations are done for WNMs verification with nominal values.
• Write failure probability as function of an input voltage shift on FFs is computed.

The assessment of noise margins and the related probability of failure in digital cells has growingly become essential, as nano-scale MOSFET and FinFET technologies are confronting reliability issues caused by aging mechanisms, such as NBTI and PBTI, and variability in process parameters. The effect of such phenomena on system level operation is particularly related to the Static Noise Margins (in idle and read mode) and the Write Noise Margins of memory elements. While Static Noise Margins have been studied in the past, in this work we calculated and compared the effect of process variations and NBTI/PBTI aging on the Write Noise Margins of various MOSFET- and FinFET-based flip-flop cells. The massive transistor-level Monte Carlo simulations produced both nominal (i.e. mean) values and associated standard deviations of the WNMs of the flip-flops. This allowed calculating the consequent write failure probability as a function of an input voltage shift, and assessing a comparison for robustness among different circuit topologies and technologies. Temperature and voltage dependence is also included in the analysis.

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