کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5447319 1511495 2017 25 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The influence of film deposition temperature on the subsequent post-annealing and crystallization of sputtered Sb2S3 thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
The influence of film deposition temperature on the subsequent post-annealing and crystallization of sputtered Sb2S3 thin films
چکیده انگلیسی
Sputter-deposited Sb2S3 thin films were studied to understand the role of the initial film deposition temperature on the subsequent crystallization during the post-annealing in N2-S ambient. The films were deposited with substrate temperatures in the range 200-350 °C. The as-deposited films were amorphous independent of the substrate temperature, however, after annealing at 300 °C all the films turned in to polycrystalline. It was observed that the thermal history (deposition temperature) of the films have a notable influence on the crystallization and grain growth due to post-annealing at 300 °C. The material properties of the annealed film such as: crystallite size, strain, grain size, refractive index, and film stoichiometry showed a dependence on the original film deposition temperature. Furthermore, AFM and SEM micrographs revealed a direct dependence of the morphological features such as grain growth, uniformity and compactness on the thermal history. Studies by variable-angle spectroscopic ellipsometry (VASE) provided some optical parameters including inter-band transitions in the Sb2S3 thin films. We present the parameterization of the dielectric function of Sb2S3 using a multi-oscillator model composed by one Tauc-Lorentz and three Lorentz oscillators.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 111, December 2017, Pages 182-189
نویسندگان
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