کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5447723 1511763 2017 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photoconductivity relaxation processes in AgCd2GaS4 single crystals
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Photoconductivity relaxation processes in AgCd2GaS4 single crystals
چکیده انگلیسی
Optical and photoelectric spectral features of AgCd2GaS4 single crystal were explored. Optical band gap energy was estimated from the absorption and was varied within 2.18-2.28 eV (at ambient temperature) for the samples cut from different parts of the single-crystalline specimens. The results of the photoconductivity relaxation study within the temperature range 100-280 K were explored within a framework of the adhesion trapping level model. It was established that the AgCd2GaS4 crystals exhibit long-term relaxation of photoconductivity with adhesion levels at energies about 0.2 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 200, 1 October 2017, Pages 250-256
نویسندگان
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