کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5447819 1511765 2017 19 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Strain dependent tuning electronic properties of noble metal di chalcogenides PdX2 (X = S, Se) mono-layer
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Strain dependent tuning electronic properties of noble metal di chalcogenides PdX2 (X = S, Se) mono-layer
چکیده انگلیسی
Electronic properties of noble metal dichalcogenides PdX2 (X = S, Se) mono-layers have been studied using plane wave pseudopotential method based on density functional theory. The observed band gap is 1.28 eV (0.84 eV) in case of PdS2 (PdSe2) mono-layer which is in close agreement with previous known results. A further variation in band gap is observed in both the two mono-layers on applying biaxial tensile and compression strain. Phonon spectrum of these mono-layers and its strained structure reflect its dynamical stability.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 198, 1 September 2017, Pages 162-166
نویسندگان
,