Diamond layout style impact on SOI MOSFET in high temperature environment

• The Diamond SOI MOSFET presents a higher performance in high temperature environment.
• The LCE and PAMDLE effects keep active in the Diamond SOI MOSFETs in high temperature environment.
• The Diamond is an alternative layout to boost the performance of SOI CMOS ICs applications operating in high temperature.

This work performs an experimental comparative study between the Diamond (hexagonal gate geometry) and Standard layouts styles for Metal–Oxide–Semiconductor Field Effect Transistor in high temperatures environment. The devices were manufactured with the 1 μm Silicon-on-Insulator CMOS technology. The results demonstrate that the Diamond SOI MOSFET is capable to keep active the Longitudinal Corner Effect and the Parallel Association of MOSFET with Different Channel Lengths Effect in high temperature conditions and consequently to continue presenting a better electrical performance than the one found in the conventional SOI MOSFET.