کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5447939 | 1511764 | 2017 | 43 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Discontinuous transition from insulator to semiconductor induced by phase change of the new organic- inorganic hybrid [(CH2)7(NH3)2]CoBr4
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Discontinuous transition from insulator to semiconductor induced by phase change of the new organic- inorganic hybrid [(CH2)7(NH3)2]CoBr4 Discontinuous transition from insulator to semiconductor induced by phase change of the new organic- inorganic hybrid [(CH2)7(NH3)2]CoBr4](/preview/png/5447939.png)
چکیده انگلیسی
[(CH2)7(NH3)2]CoBr4, triclinic crystal has a space group P1¯ with two molecules per asymmetric unit cell (Z = 2). Unit cell dimensions are: a = 7.6588 (3) Ã
, b = 10.5160 (3) Ã
, c = 11.3319 (5) Ã
, α = 66.745 (2) °, β = 77.2258 (13) °, γ = 88.001 (2) °, volume = 816.37(5) Ã
3 and calculated density = 2.078 Mgmâ3. The structure consists of [CoBr4]2âtetrahdera separated by heptane diammonium layers. The organic hydrocarbon layers' pack in a stacked herring-bone manner hydrogen bonded to the halide ions. Lattice potential energy is Upot = 1827.7 kJ/mol, and molecular volume Vm = 0.408 nm3. Calorimetric (DSC) measurements indicate phase transitions at T1 = 350 ± 1 K (ÎS = 22.7 J/K-mol) and 335 K (ÎS = 10.5 J/K-mol). Dielectric and conductivity as a function of temperature (300 < T K < 420) and frequency (0.21 < f (kHz) < 60) were investigated. Abrupt change from an insulator to semiconductor behavior takes place around T1. At low temperatures, thermally activated Arrhenius behavior is observed with frequency dependent, temperature independent activation energy. At high temperatures conductivity and activation energy are frequency and temperature dependent implying non-Arrhenius type behavior where the charged particles experience different potentials for local and long distance movements. Conduction takes place via correlated barrier hopping with maximum barrier height WM = 0.015 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 199, 15 September 2017, Pages 454-463
Journal: Materials Chemistry and Physics - Volume 199, 15 September 2017, Pages 454-463
نویسندگان
Mohga F. Mostafa, Shimaa S. Elkhiyami, Seham A. Alal,