Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric

In this paper, reliability of Through Silicon via (TSV) interconnects is analyzed for two technologies. First part presents an exhaustive analysis of Cu TSV-last approach of 2 μm diameter and 15 μm of depth. Thermal cycling and electromigration stresses are performed on dedicated devices. Thermal cycling is revealed to induce only defects on non-mature processes. Electromigration induces voids in adjacent metal level, right at TSV interface. Moreover, the expected lifetime benefit by increasing line thickness does not occur due to increasing dispersion of voiding mechanism. Second part covers reliability of Cu TSV-middle technology, of 10 μm diameter and 80 μm depth, with thermal cycling, BEoL dielectric breakdown, and electromigration study. Thermal cycling is assessed on two designs: isolated and dense TSV patterns. Dielectric breakdown tests underline an impact of TSV on the reliability of metal level dielectrics right above TSV. Electromigration reveal similar degradation mechanism and kinetic as on TSV-last approach.