Design optimization of SiGe BiCMOS Silicon Controlled Rectifier for Charged Device Model (CDM) protection applications

• We optimized the SCRs in SiGe/BiCMOS process for Charged Device Model ESD.
• We provided the TCAD simulation method for CDM ESD protection.
• We investigated the SCRs by using very fast Transmission Line Pulse.

Silicon Controlled Rectifier (SCR) devices fabricated in a SiGe BiCMOS technology are optimized for Charged Device Model (CDM) Electrostatic Discharge (ESD) protection. This optimization involves combined experimental and Technology Computer Aided Design (TCAD) ESD simulation analysis of the quasi-static current–voltage and transient response characteristics during fast stress conditions. The underlying physical mechanisms critical to the device design are demonstrated based on very fast transmission line pulsing (VFTLP) measurement and physics-based simulation results.