کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
544957 | 871796 | 2014 | 8 صفحه PDF | دانلود رایگان |

• Transient detection circuit realized with SCR to detect transient disturbance.
• Electrostatic discharge (ESD) generates transient disturbance to the system.
• Electrical fast transient (EFT) generates transient disturbance to the system.
• The electrical transients during system-level ESD or EFT tests can be detected.
• Cooperated with firmware to execute recovery procedure of microelectronic system.
A new silicon controlled rectifier (SCR)-based transient detection circuit for on-chip protection design against system-level electrical transient disturbance is proposed. The circuit function to detect positive or negative electrical transients during system-level electrostatic discharge (ESD) and electrical fast transient (EFT) tests has been verified in silicon chip. The experimental results in a 0.18-μm CMOS process have confirmed that the new proposed detection circuit can successfully memorize the occurrence of system-level electrical transient disturbance events. The detection results can be cooperated with firmware design to execute system recovery procedures, therefore the immunity of microelectronic systems against system-level ESD or EFT tests can be effectively improved.
Journal: Microelectronics Reliability - Volume 54, Issue 1, January 2014, Pages 71–78