کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545028 | 871802 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Voltage and current stress induced variations in TiN/HfSixOy/TiN MIM capacitors
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
In this paper we have investigated the long-term reliability of TiN/HfSixOy/TiN Metal–Insulator–Metal (MIM) capacitors by using constant voltage stress (CVS) and constant current stress (CCS). No significant increase in leakage current was observed as a function of stress time. On the other hand, stress induced capacitance changes were observed due to change in quadratic and liner coefficients of permittivity nonlinearities. Stress-induced oxygen vacancy related defect formation believed to be the cause of this shift in permittivity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 53, Issue 2, February 2013, Pages 270–273
Journal: Microelectronics Reliability - Volume 53, Issue 2, February 2013, Pages 270–273
نویسندگان
D. Misra, Jyothi Kasinath, Arun N. Chandorkar,