کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5450627 | 1513063 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced mobility of Cu4SnS4 films prepared by annealing SnS-CuS stacks in a graphite box
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی های تجدید پذیر، توسعه پایدار و محیط زیست
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Enhanced mobility of Cu4SnS4 films prepared by annealing SnS-CuS stacks in a graphite box Enhanced mobility of Cu4SnS4 films prepared by annealing SnS-CuS stacks in a graphite box](/preview/png/5450627.png)
چکیده انگلیسی
High-quality Cu4SnS4 thin films are prepared by annealing chemical bath-deposited SnS-CuS stacks in a graphite box. The effects of annealing temperature on the grain growth and morphology of these films are investigated in this study. Results showed that the films prepared at 500-580 °C yielded an orthorhombic crystal structure with lattice parameters a = 1.371 nm, b = 0.766 nm and c = 0.643 nm, a crystallite size of 260 nm, an increased grain size from 2 μm to greater than 6 μm, a direct optical band gap of 1.0 eV, and p-type electrical conductivity. The films prepared at 550 °C and 580 °C exhibited a relatively high hole mobility of 150 cm2Vâ1sâ1. These properties suggest that the films developed in this study can yield reasonable device efficiency when used as solar cell absorber layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy - Volume 155, October 2017, Pages 336-341
Journal: Solar Energy - Volume 155, October 2017, Pages 336-341
نویسندگان
U. Chalapathi, B. Poornaprakash, Si-Hyun Park,