کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5450659 | 1513063 | 2017 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Superior silicon surface passivation in HIT solar cells by optimizing a-SiOx:H thin films: A compact intrinsic passivation layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی های تجدید پذیر، توسعه پایدار و محیط زیست
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The microstructure of the intrinsic amorphous silicon oxide (i-a-SiOx:H) thin films is the key for crystalline silicon surface passivation in high-performance HIT solar cells. Understanding and subsequently optimizing the i-a-SiOx:H microstructure is essential in improving defect passivation and carrier transportation in a-SiOx:H films. In this work, we investigate the relationship between the bulk microstructure of i-a-SiOx:H thin films at different oxygen content and the passivation quality of the silicon surface. The results revealed that, as the oxygen content increases, the dominating growth mechanism of i-a-SiOx:H films changes. Consequently, the component contents of i-a-SiOx:H thin films were varied and the microstructure showed a first improved and then deteriorated trend with increasing oxygen content. A compact, less-defective and ordered microstructure of the a-SiOx:H film can only be obtained when there comes a tradeoff between SiO and SiH(Si3) bonding formation. Correspondingly, the improved defect passivation and the enhanced carrier transportation in a-SiOx:H films lead to the increase of Voc, FF and QE of HIT solar cells, all of which are key solar cell performance parameters.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy - Volume 155, October 2017, Pages 670-678
Journal: Solar Energy - Volume 155, October 2017, Pages 670-678
نویسندگان
Bin Zhang, Yu Zhang, Ridong Cong, Yun Li, Wei Yu, Guangsheng Fu,