A comparative study of self-heating effect of nMOSFETs fabricated on SGOI and SGSOAN substrates

In this work, for the first time, the electrical and thermal characteristics of strained Si/SiGe nanoscale n type metal–oxide–silicon field-effect transistors (MOSFETs) with silicon-on-aluminum nitride (SOAN) substrate are investigated by ISE TCAD. This novel structure is named as SGSOAN nMOSFET. A comparative study of self-heating effect (SHE) of nMOSFETs fabricated on SGOI and SGSOAN are presented in this paper. Numerical study results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices, which gives a more promising application for SGOI to work at high temperature.