Studying the effect of the impulse voltage application on sc-Si PV modules

- No degradation is induced on module A for voltages up to IEC 61730-2 limits.
- Module A withstands voltage up to 35 kV following the steps of IEC 61730-2.
- Tests in rod-to-module gap showed that 144 kV is needed for module's destruction.

In the present work, the impact of standard impulse lightning voltage strikes (1.2/50 μs) on the performance of single-crystalline silicon photovoltaic modules (whose construction has been assessed by IEC 61730) is evaluated. Tests are carried out according to the IEC 61730-2 Standard, while one of the main claims of the present work refers to extreme tests with voltage levels far beyond those proposed by the above Standards. The performance is evaluated by means of I-V and P-V characteristic curve recording for the module under test, followed by a detailed comparison with the corresponding curves of a reference module. The data are reduced to Standard Tests Conditions according to IEC 60891:2009. Special attention is paid on the consideration of possible sources of inherent measuring errors, for reliable comparison between the reference and the stressed module. The results suggest that, neither power nor mechanical degradation is induced on the photovoltaic module for voltages up to the limits imposed by the IEC 61730-2 (i.e. 12 kV peak). Interestingly, the module withstands voltages up to 35 kV peak, as far as the rest procedure of the Standards is strictly followed. Finally, tests in “rod-to-module” gap are performed to simulate direct lightning strikes on the module, showing that a peak voltage as high as 144 kV is needed for destructing the module, both electrically, thermally, and mechanically.