NBTI and hot carrier effect of Schottky-barrier p-MOSFETs

The experimental investigation of NBTI and hot carrier induced device degradation in Pt-silicided Schottky-barrier p-MOSFETs has been performed. The investigations on the threshold voltage shifts, the degradation of inverse subthreshold slope, and the decrease of ION/IOFF ratio have been carried out using the modulation of Schottky-barrier height and width. After NBTI and hot carrier stress, the decrease of ION could be explained by the lower hole tunneling current through the more increased Schottky-barrier height and the increased IOFF could be explained by the increase of the amount of electron thermal emission and tunneling through thinner Schottky-barrier into the near drain. After hot carrier stress, it is observed that the threshold voltage shifts to more negative values for all stress gate voltages and the drain current is decreased. The device degradation is more significant as the stress gate voltage decreases.