کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
545205 1450553 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Scan chain failure analysis using laser voltage imaging
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Scan chain failure analysis using laser voltage imaging
چکیده انگلیسی

Design-for-test methodologies have enabled considerable reduction in test time and improvement in defect isolation. Defects which impede correct operation of scan chains are a significant fraction of yield loss. Isolating these defects is an important but underserved activity.Image-based technologies examining an extended area of die are popular diagnostics techniques because they provide intuitive and useful results. Emission based microscopy and laser fault isolation techniques, both static and dynamic, are readily available. However, neither technique provides insight to specific timing characteristics of the IC. Photoemission microscopy suffers from decreasing signal strength at lower voltages, and laser techniques can be difficult to perform with production test setups, requiring involved test pattern and setup adaptation.In this paper, we describe two scan chain defect localization case studies using Laser Voltage Imaging [1] on 40 nm bulk CMOS technology operating at 0.9 V. Results are also compared to other diagnostics techniques, including software-based shift analysis and photoemission microscopy.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 50, Issues 9–11, September–November 2010, Pages 1422–1426
نویسندگان
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