Epitaxial growth of vertically stacked p-MoS2/n-MoS2 heterostructures by chemical vapor deposition for light emitting devices

A single-crystal tetra-layered heterostructure of vertically stacked n-MoS2/p-MoS2/p-GaN was synthesized by chemical vapor deposition. The n-MoS2/p-MoS2/p-GaN heterostructure can be used to fabricate atomically thin white-light-emitting devices. The electroluminescence spectra observed from these devices in forward bias exhibit pure white light emission, which comprises the blue, green, and orange emissions from p-GaN, p-MoS2, and n-MoS2, respectively.259