Significantly enhanced energy conversion efficiency of CuInS2 quantum dot sensitized solar cells by controlling surface defects

Cu/In non-stoichiometric ratios of CuInS2 (CIS) quantum dot (QDs) are carefully controlled for highly efficient CIS QDs-sensitized solar cells. Up to 8.54% efficiency is achieved as a new record for CIS-based solar cells. Interfacial electron recombination mechanism is proposed, with the In content increasing, surface defects of CIS QDs are significantly reduced, thus leading to interfacial carrier recombination efficiently inhibited.200