Facing the defect characterization and localization challenges of bridge defects on a submicronic technology (45 nm and below)

For very deep submicron technologies, 45 nm and less, bridge defects are getting more and more complex and critical. In order to find the exact root cause, accurate defect localization, precise understanding on the nature of the defect and its impact on the fine electrical behaviour of the device are mandatory. At these ultimate technologic nodes, failure analysis techniques show a real lack of efficiency on bridge defect localization while this precise location is one of the keys to find the defect root cause that allows correct implementation of corrective actions to improve yield and reliability.To face this challenge we have built a complete set of signatures related to advance Eldo simulations, performed measurement with ultimate failure analysis tools, fully characterized a microelectronic structure in advanced technology presenting a bridge defect and established a complete link between all these data and the failure location.