Efficient coupling of lateral force in GaN nanorod piezoelectric nanogenerators by vertically integrated pyramided Si substrate

The single-crystalline obliquely aligned GaN nanorods (NRs) were grown on textured-Si substrate by plasma-assisted molecular beam epitaxy (PA-MBE). By applying a normal force, enhanced piezoelectric energy was obtained from bending the obliquely aligned GaN piezoelectric NRs integrated in the vertically integrated nanogenerator (VING).349