A first-order kinetics ageing model for the hot-carrier stress of high-voltage MOSFETs

We derive a general purpose ageing model for the device parameter drift class that may be related to the activation of a large number of statistically independent microscopic defects, with distributed activation energy and first-order reaction kinetics. We present, as a practical application, a model for predicting the ON state resistance drift of a high-voltage n-channel MOSFET under hot-carrier stress.