Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer

This work investigates the influence of high-energy neutrons on oxidized high-resistivity silicon substrates (HR-Si). Two oxide thicknesses as well as the presence of a trap-rich passivation layer are considered. The impact of neutron irradiation is directly related to the competition between the generation of interface traps added to the mobility and carrier lifetime degradation, which are beneficial to reduce parasitic surface conduction (PCS) into the Si substrate similarly to the passivation layer, and accumulation of radiation-induced positive charges in oxide, which would unfortunately increase PSC. It is shown that under neutron irradiation, RF losses are strongly reduced in the case of thin oxide (tox = 50 nm), while substrates with a polysilicon passivation layer are almost insensitive to the neutron irradiation.