Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures

The forward and reverse bias I–V, C–V, and G/ω–V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al0.22Ga0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiNx insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiNx) on the main electrical parameters such as the ideality factor (n), zero-bias barrier height (ФB0), series resistance (Rs), interface-state density (Nss). The energy density distribution profiles of the Nss were obtained from the forward bias I–V characteristics by taking into account the voltage dependence of the effective barrier height (Фe) and ideality factor (nV) of devices. In addition, the Nss as a function of Ec–Ess was determined from the low-high frequency capacitance methods. It was found that the values of Nss and Rs in SBD HEMTs decreases with increasing insulator layer thickness.