Characteristics optimization of N2O annealing on tungsten nanocrystal with W/Si dual-sputtered method for nonvolatile memory application

The tungsten nanocrystals (W-NCs) memories fabricated by W/Si dual-sputtering and O2 and N2O annealing process were investigated. Significant W-NCs dots were formed by N2O annealing and proved by the energy dispersive X-ray spectrometer (EDX) analysis. Superior electrical properties of W-NCs memories were optimized for 20/30 W/Si dual-sputtered ratio, 10–15 nm blocking oxide thickness and N2O annealing at 950 °C. A pronounced capacitance–voltage hysteresis was observed with a memory window of 6.5 V under +9/−9 V sweeping.