The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuit

This work estimates the influences of the intrinsic parameter fluctuations consisting of metal gate workfunction fluctuation (WKF), process variation effect (PVE) and random dopant fluctuation (RDF) on 16-nm-gate planar metal–oxide–semiconductor field effect transistors (MOSFETs) and circuits by using an experimentally validated three-dimensional device and coupled device–circuit simulations. The dominance fluctuation source in threshold voltage, gate capacitance, cut-off frequency, high-frequency gain, 3 dB bandwidth, unity-gain bandwidth, power, and the power-added efficiency has been found. Similar to the trend of the cut-off frequency, the PVE and RDF dominate both the device and circuits characteristic fluctuations due to the significant gate capacitance fluctuations and the WKF is less important at this simulation scenario.