An investigation of drain pulse induced hot carrier degradation in n-type low temperature polycrystalline silicon thin film transistors

Degradation of n-type low temperature polycrystalline silicon thin film transistors under drain pulse stress is first investigated. Stress parameters are pulse amplitude, frequency and transition time. Device degradation is found to be dominated by a dynamic hot carrier effect, which is independent of pulse falling time but depends on pulse rising time. Shorter rising time brings larger device degradation. Based on experimental results and device simulation, a PN junction degradation model taking trap related carrier emission and trapping into account is proposed.