کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545412 | 871823 | 2010 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Wafer-level bonding/stacking technology for 3D integration
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Enhanced transmission speeds, lower power consumption, better performance, and smaller form factors are reported as advantages in many devices and applications when using 3D integration. One core technique for performing 3D interconnection is stacked bonding. In this paper, wafer-level bonding technologies are reviewed and described in detail, including bonding materials and bonding conditions. The corresponding 3D integration technologies and platforms developed world-wide are also organized and addressed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 50, Issue 4, April 2010, Pages 481–488
Journal: Microelectronics Reliability - Volume 50, Issue 4, April 2010, Pages 481–488
نویسندگان
Cheng-Ta Ko, Kuan-Neng Chen,