کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5454526 | 1514353 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structure transformation of Ti films deposited on SiC single crystal substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structure transformation of Ti films deposited on SiC single crystal substrates Structure transformation of Ti films deposited on SiC single crystal substrates](/preview/png/5454526.png)
چکیده انگلیسی
This paper reports the structure transformation of Ti films deposited on SiC(0001) single crystal substrates using DC magnetron sputtering. Film thickness, sputter power and temperature of deposition were changed to investigate structure transformation of Ti films. The structure characterization of Ti film was performed by means of X-Ray Diffraction (XRD) and High-Resolution Transmission Electron Microscope (HRTEM). The results showed that the Ti film grew epitaxially with a face centered cubic (fcc) structure even the thickness is up to about 50Â nm. High temperature and low sputter power are propitious to the formation of fcc-Ti. An interesting intermediate state of the fcc-hcp transformation was observed. This intermediate structure could help us to understand the mechanism of thickness-dependent fcc-hcp transformation in Ti thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Characterization - Volume 134, December 2017, Pages 64-68
Journal: Materials Characterization - Volume 134, December 2017, Pages 64-68
نویسندگان
Lei Li, Yan Liu, Xiaonan Mao, Liying Zeng, Vincent JI,