کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
545560 871832 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
چکیده انگلیسی

Excellent reliability performance of AlGaN/GaN HEMTs on SiC substrates for next generation mobile communication systems has been demonstrated using DC and RF stress tests on 8 × 60 μm wide and 0.5 μm long AlGaN/GaN HEMTs at a drain voltage of Vd = 50 V. Drain current recovery measurements after stress indicate that the degradation is partly caused by slow traps generated in the SiN passivation or in the HEMT epitaxial layers. The traps in the SiN passivation layer were characterized using high and low frequency capacitance–voltage (CV) measurements of MIS test structures on thick lightly doped GaN layers.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 49, Issue 5, May 2009, Pages 474–477
نویسندگان
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