کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545562 | 871832 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Determining DC/RF survivability limits of GaAs semiconductor circuits
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Methods for determining long term product reliability due to channel temperature, environmental conditions or bias have been thoroughly documented and understood. In contrast, intermittent DC/RF overdrive survivability limits have been looked at, but for the most part not fully understood. This is aggravated by the fact that most product datasheets only point to one absolute maximum operating value, which many times is confused with a survivability limit. This paper discusses the differences between these two distinct specifications and a method we have used for determining survivability limits based on input power and bias voltage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 49, Issue 5, May 2009, Pages 484–487
Journal: Microelectronics Reliability - Volume 49, Issue 5, May 2009, Pages 484–487
نویسندگان
C. Gil, P. Ersland, A. Li,