کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5456322 | 1514659 | 2017 | 20 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mechanism of the Bauschinger effect in Al-Ge-Si alloys
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
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چکیده انگلیسی
Wrought Al-Ge-Si alloys were designed and produced to ensure dislocation bypass strengthening (“hard pin” precipitates) without significant precipitate cutting/shearing (“soft pin” precipitates). These unusual alloys were processed from the melt, solution heat treated and aged. Aging curves at temperatures of 120, 160, 200 and 240 °C were established and the corresponding precipitate spacings, sizes, and morphologies were measured using TEM. The role of non-shearable precipitates in determining the magnitude of Bauschinger was revealed using large-strain compression/tension tests. The effect of precipitates on the Bauschinger response was stronger than that of grain boundaries, even for these dilute alloys. The Bauschinger effect increases dramatically from the under-aged to the peak aged condition and remains constant or decreases slowly through over-aging. This is consistent with reported behavior for Al-Cu alloys (maximum effect at peak aging) and for other Al alloys (increasing through over-aging) such as Al-Cu-Li, Al 6111, Al 2524, and Al 6013. The Al-Ge-Si alloy response was simulated with three microstructural models, including a novel SD (SuperDislocation) model, to reveal the origins of the Bauschinger effect in dilute precipitation-hardened / bypass alloys. The dominant mechanism is related to the elastic interaction of polarized dislocation arrays (generalized pile-up or bow-out model) at precipitate obstacles. Such effects are ignored in continuum and crystal plasticity models.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volume 684, 27 January 2017, Pages 353-372
Journal: Materials Science and Engineering: A - Volume 684, 27 January 2017, Pages 353-372
نویسندگان
Wei Gan, Hyuk Jong Bong, Hojun Lim, R.K. Boger, F. Barlat, R.H. Wagoner,