کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5457201 1515537 2017 18 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Modulation of electronic structures of MoSe2/WSe2 van der Waals heterostructure by external electric field
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Modulation of electronic structures of MoSe2/WSe2 van der Waals heterostructure by external electric field
چکیده انگلیسی
By using first-principles calculations, we investigate the electronic structures of MoSe2/WSe2 van der Waals(vdW) heterostructure by applying external electric field(Eext) perpendicular to the layers. It is demonstrated that MoSe2/WSe2 heterostructure is a type-II vdW heterostructure. The band gap of MoSe2/WSe2 is significantly modulated by Eext, eventually a semiconductor-to-metal transition can be realized. The positive and negative Eext have different effects on the band gap due to the intrinsic spontaneous electric polarization in MoSe2/WSe2 heterostructure. Moreover, MoSe2/WSe2 heterobilayer experiences transitions from type-II to type-I and then to type-II under various Eext. The present study provides great application potential of ultrathin MoSe2/WSe2 heterostructure in future nano- and optoelectronics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 266, October 2017, Pages 11-15
نویسندگان
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