کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5457232 | 1515544 | 2017 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of Mn-Sin complexes in GaN: A first principles investigation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Using first principles calculations, we study the relative spatial distribution of Mn and Si impurities in the host matrix of GaN. It stems from our investigation that the co-doping of (Ga,Mn)N with Si will result in the formation of Mn-Si complexes with a large absolute pairing energy of 2.27Â eV. The formation of such complexes is energetically feasible already at the growth surface. According to our results, larger complexes involving two Si ions are also possible in bulk but exhibit a much smaller absolute pairing energy. Finally, the co-doping of (Ga,Mn)N with Si results in the reduction of the charge state of Mn from 3+ to 2+ regardless of the relative position of Si and Mn in the gallium sublattice.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 259, June 2017, Pages 16-18
Journal: Solid State Communications - Volume 259, June 2017, Pages 16-18
نویسندگان
N. Gonzalez Szwacki,