کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5457245 1515545 2017 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Designing and engineering electronic band gap of graphene nanosheet by P dopants
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Designing and engineering electronic band gap of graphene nanosheet by P dopants
چکیده انگلیسی
geometrical pattern of phosphorus impurities in the GNS. Furthermore, I found out that there is an electronic band gap with a single phosphorus impurities and it is increased with increasing the concentrations of phosphorus impurities. Also, total energy is affected and decreased with increasing the concentrations of phosphorus impurities, which is led to make all structures are unstable and more reactive. Then, phosphorus impurities are significantly contributing to engineering, control and alter the electronic properties of the GNS, which is very important in various applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 258, May 2017, Pages 11-16
نویسندگان
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